Invited Speakers

Growth Symposium

Alan Doolittle, Georgia Institute of Technology
Low Temperature AlN Epitaxy, Doping, and Devices

Hajime Fujikura, Sumitomo Chemical
Recent Progress in HVPE-based GaN and AlGaN Growth

James Grandusky, Crystal IS
Development of 100 mm AlN Single-Crystal Growth and Subsequent Substrate Preparation

Douglas Irving, NC State University
Predicting Point Defect Distributions in III-Nitrides and Their Alloys During Growth and Processing

Satoru Izumisawa, Mitsubishi Chemical Corporation
Scaling up Acidic Ammonothermal Crystal Growth for Mass Production of 4-inch GaN Substrates and Beyond

Taishi Kimura, Toyota Cent Res & Dev Labs Inc
Halogen-Free Vapor Phase Epitaxy 

Tim Kolbe, Ferdinand-Braun-Institut
Advances in the Epitaxial Growth of Heterostructures for far-ultraviolet C Light Emitting Diodes

Stefano Leone, Fraunhofer Institute
AlScN and AlYN: From MOCVD Growth to Devices

Takashi Matsuoka, Tohoku University
The Underemphasized Concept of Crystal Polarity in Conventional Semiconductors and Its Device Application

Hisashi Murakami, Tokyo University of Agriculture and Technology
Halide Vapor Phase Epitaxy of Thick GaN and AlGaN using GaCl, GaCl3 and AlCl3 

Robert Nemanich, Arizona State University
Epitaxial Growth of c-BN on Diamond and Strategies for Electronic Applications

Siddha Pimputkar, Lehigh University
Progress in Bulk Single Crystal Growth of Boron Nitride

Shadi Shahedipour-Sandvik, State University of New York-Albany
Novel Be Doping Techniques to Enable High-Efficiency P-Type III-Nitrides

Henryk Turski, Institute of High Pressure Physics
Epitaxy of III-Nitride Devices on Opposite Facets of the Same Polar Crystal: New Perspectives in Materials Engineering

Fujiwara Yasufumi, Osaka University

Control and Reconfiguration of Eu Emission Centers in GaN for Efficient Red LEDs

Optoelectronic Devices Symposium

Robert Armitage, Lumileds
Development of InGaN LEDs for Color Display Applications

Daniel Feezell, University of New Mexico
Measurement of Carrier Dynamics in Commercial-Grade InGaN/GaN Light-Emitting Diodes Using Small-Signal Electroluminescence

Åsa Haglund, Chalmers University of Technology
The Quest for Surface Emitting Lasers in the Ultraviolet

Hideki Hirayama, RIKEN
Efficiency Increase in 220-230 nm Far-UVC LEDs fabricated on c-sapphire and Demonstration of 200 mW Class 230 nm Power LED Module  

Motoaki Iwaya, Meijo University
Current Status and Challenges of AlGaN-based UV-B Laser Diodes Fabricated on Lattice Relaxed AlGaN

Michael Kneissl, TU Berlin
Carrier Recombination, Transport Dynamics and Degradation in Far-UVC LEDs: Assessing Efficiency Limits

Hirotsugu Kobayashi, Asahi Kasei
Recent Progress of Far UV-C LEDs on AIN Substrate

Tomoaki Koizumi and Susumu Noda, Kyoto University
Realization of High-power and High-beam Quality Blue Photonic-crystal Surface-emitting Lasers

Maki Kushimoto, Nagoya University
Deep Ultraviolet Semiconductor Laser with Polarisation Control Technology

Kazuhiro Ohkawa, KAUST
InGaN-based Red Emitters on Sapphire and ScAlMgO4 Substrates

Marco Rossetti, EXALOS
High-efficiency and Long-wavelength Green Laser Diodes and Superluminescent Diodes with AlInN Layers

Tetsuya Takeuchi, Meijo University
Progress on GaN-Based VCSELs

Claude Weisbuch, Ecole Polytechnique France/USCB
What We Learned From Photo and Electro Emission Experiments in III-Nitrides

Thomas Wunderer, Palo Alto Research Center

Tunable Single-Frequency Photonic Integrated UV-A and Visible Laser Diodes

Novel Materials and Nanostructures Symposium

Hongxing Jiang, Texas Tech
Development of Wafer-Scale h-BN Quasi-bulk Crystals

Satoshi Kamiyama, Meijo University
GaInN-based Multi-Quantum Shells (MQSs) on GaN Nanowires Toward High-power and High-beam-quality Lasers

Jong-Kyu Kim, Postech
Hexagonal Boron Nitrides Grown by MOCVD for Photonics and Electronics Applications

Akihiko Kikuchi, Sophia University
Fabrication of GaN-based Nanostructures and Photonic Crystals by Hydrogen Environment Anisotropic Thermal Etching (HEATE)

Manos Kioupakis, University of Michigan
Excitons and Exciton-phonon Quantum Processes in Atomically Thin Nitride Heterostructures

Xiuling Li, University of Texas, Austin
Unleaching MicroLED Potential: Damage-free Anisotropic Etching for Enhanced Pixel Density

Yong-Ho Ra, Jeonbuk National University
Vertical Light-Emitting InGaN Nanorod Lasing Heterostructures for Ultra-Compact Micro-Displays

Lars Samuelson, Institute of Nanoscience and Applications, SUSTech; NanoLund, Lund University; Hexagem AB
A Bottom-up Approach to Efficient Red-emitting MicroLEDs at Sub-µm Pixel Scale

Ulrich T. Schwarz, Technical University of Chemnitz
Estimating Loss Mechanisms in Short Wavelength Visible and UV PCSEL

Ian Sharp, Walter Schottky Institut, Munich University of Technology
Engineering III-N Interfaces via Atomic Layer Deposition: From Solar Fuels to 2D Materials Integration

Andreas Waag, Technische Universität Braunschweig
Structured Light by MicroLEDs From Chip Processing to Optical Neuromorphic Computing

Songrui Zhao, McGill University

Epitaxial, Scalable III-nitride Nanowire Lasers and Photodetectors

Characterization Symposium

Oliver Ambacher, University of Freiburg
Structural, Dielectric and Elastic Properties of ScAlN Layers for Applications in Piezoacoustic Devices

Gordon Callsen, University of Bremen
Combined Optical and Thermal Characterization of III-nitride Membranes by Microphotoluminescence and Raman Thermometry

Vanya Darakchieva, Linkoping University
THz EPR Ellipsometry 

Gregory Fuchs, Cornell University
Room Temperature Optically Detected Magnetic Resonance of Single Spins in GaN

Sylvia Hagedorn, Ferdinand-Braun-Institut
Origin of the Parasitic Luminescence of 235 nm UVC LEDs

Jennifer Hite, University of Florida
Development of GaN for Vertical Applications

Shuhei Ichikawa, Osaka University
Surface Carrier Dynamics of Nitride Semiconductors Evaluated by Time-resolved Photoemission Spectroscopy

Yoshihiro Ishitani, Chiba University
Phonon Dynamics Analysis of InGaN/GaN Heterostructures by Raman Spectroscopy Using a Double Laser System

Peter Parbrook, University College Cork
Prospects for Boron Containing Nitride Alloys for Visible and UV Optoelectronics

Stacia Keller, University of California, Santa Barbara
Growth and Characterization of Relaxed InGaN

Naoki Ohashi, NIMS
Investigation on Ferroelectricity in Aluminum Nitride and it's Solid Solutions

Jun Suda, Nagoya University

Characterization of Extrinsic and Intrinsic Point Defects in Homoepitaxial GaN

Electronic Devices Symposium

Andrew Binder, Sandia National Laboratory
An Outlook on Vertical Gallium Nitride Compared to Incumbent Technology

Peter Brückner, Fraunhofer
IAF GaN Technology Towards 200 GHz

Srabanti Chowdhury, Stanford University
More Power to GaN with Diamond Integration

Rongming Chu, The Pennsylvania State University
GaN Super-Heterojunction Devices and Integration

Karen Geens (presented by Benoit Bakeroot), IMEC
GaN Power Devices on 200 mm Engineered Substrates

Brianna Klein, Sandia National Laboratory
Ultrawide Bandgap AlGaN transistors for High Operating Temperature Electronics

Martin Kuball, University of Bristol
The Next Generation of RF Electronics: Can GaN-on-Diamond Replace GaN-on-SiC Electronics? 

Takeru Kumabe, Nagoya University
High-AI-Content AIGaN p-n Diodes Enabled by Distributed Polarizing Doping

Elison Matioli, EPFL
Emerging technologies for GaN electronics: Polarization-engineering for high-performance power devices 

Farid Medjdoub, CNRS
Recent Progress of Vertical GaN-on-Silicon Devices

Matteo Meneghini, University of Padua
Vertical GaN Devices: Degradation Physics and Recent Case Studies

Tomas Palacios, Massachusetts Institute of Technology
GaN Technologies and Devices to Enable the Full Potential of Back-Side Power Delivery 

Spyros Pavlidis, NC State University
Harnessing Mg Implantation and Ultra-high Pressure Annealing for High-performance Vertical GaN Power Diodes

Biplab Sarkar, Indian Institute of Technology
GaN Camel Diode: A Unipolar Diode Enabled by the Mg-diffusion Process in III-polar and N-polar GaN 

E. Bahat Treidel, Ferdinand-Braun-Institut
Vertical Devices on Bulk GaN and on Foreign Substrates

Douglas Yoder, Georgia Institute of Technology
Theoretical Analysis of GaN-based Gunn Effect Devices

Yuhao Zhang, Virginia Tech
Multidimensional Power Devices in GaN: Superjunction, Multi-channel, and FinFET